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Title: P type porous silicon resistivity and carrier transport

The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.
Authors:
 [1] ;  [1] ;  [2] ; ;  [3]
  1. STMicroelectronics, 10, rue Thalès de Milet, 37071 Tours Cedex 2 (France)
  2. (France)
  3. Université François Rabelais de Tours, CNRS, CEA, INSA CVL, GREMAN UMR 7347, Tours (France)
Publication Date:
OSTI Identifier:
22489481
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; ELECTRONIC EQUIPMENT; FERMI LEVEL; PHYSICAL PROPERTIES; POROSITY; POROUS MATERIALS; SILICON; TEMPERATURE RANGE 0273-0400 K