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Title: Electrostatically defined silicon quantum dots with counted antimony donor implants

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
Authors:
; ;  [1] ;  [2] ; ; ; ; ; ; ; ; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22489436
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 6; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANTIMONY; ION BEAMS; QUANTUM COMPUTERS; QUANTUM DOTS; QUBITS; SEMICONDUCTOR MATERIALS; SILICON; SPIN