Electrostatically defined silicon quantum dots with counted antimony donor implants

Journal Article · Mon Feb 08 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4940421· OSTI ID:22489436

Luhman, D. R.; Lilly, M. P. ^[1]; Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

• OSTI ID: 22489436
• Journal Information: Applied Physics Letters, Vol. 108, Issue 6; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANTIMONY
ION BEAMS
QUANTUM COMPUTERS
QUANTUM DOTS
QUBITS
SEMICONDUCTOR MATERIALS
SILICON
SPIN