Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

Journal Article · Mon Jan 25 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4940970· OSTI ID:22489362

Wang, Ke; Imai, Daichi; Kusakabe, Kazuhide ^[1]; Yoshikawa, Akihiko ^[1]

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1. Center for SMART Green Innovation Research, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thick and relaxed but defective InGaN for solar cell applications.

• OSTI ID: 22489362
• Journal Information: Applied Physics Letters, Vol. 108, Issue 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM NITRIDES
LEAKAGE CURRENT
LEAKS
MOLECULAR BEAM EPITAXY
PASSIVATION
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
SOLAR CELLS