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Title: Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thick and relaxed but defective InGaN for solar cell applications.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Center for SMART Green Innovation Research, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22489362
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM NITRIDES; LEAKAGE CURRENT; LEAKS; MOLECULAR BEAM EPITAXY; PASSIVATION; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; SOLAR CELLS