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Title: Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.
Authors:
 [1] ;  [1] ;  [2]
  1. Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22489242
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDES; ORGANOMETALLIC COMPOUNDS; SENSORS; SUBSTRATES; SURFACE AREA; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSISTORS; TWO-DIMENSIONAL SYSTEMS