What is limiting low-temperature atomic layer deposition of Al{sub 2}O{sub 3}? A vibrational sum-frequency generation study
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)
The surface reactions during atomic layer deposition (ALD) of Al{sub 2}O{sub 3} from Al(CH{sub 3}){sub 3} and H{sub 2}O have been studied with broadband sum-frequency generation to reveal what is limiting the growth at low temperatures. The –CH{sub 3} surface coverage was measured for temperatures between 100 and 300 °C and the absolute reaction cross sections, describing the reaction kinetics, were determined for both half-cycles. It was found that –CH{sub 3} groups persisted on the surface after saturation of the H{sub 2}O half-cycle. From a direct correlation with the growth per cycle, it was established that the reduced reactivity of H{sub 2}O towards –CH{sub 3} is the dominant factor limiting the ALD process at low temperatures.
- OSTI ID:
- 22489234
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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