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Title: Evolution of complementary resistive switching characteristics using IrO{sub x}/GdO{sub x}/Al{sub 2}O{sub 3}/TiN structure

The complementary resistive switching (CRS) characteristics using an IrO{sub x}/GdO{sub x}/Al{sub 2}O{sub 3}/TiN single cell are observed whereas the bipolar resistive switching (BRS) characteristics are observed for the IrO{sub x}/GdO{sub x}/TiN structure. Transmission electron microscope and energy dispersive X-ray spectroscopy depth profile show crystalline GdO{sub x} film and the presence of higher amount of oxygen at both IrO{sub x}/GdO{sub x} interface and Al{sub 2}O{sub 3} layer. Inserting thin Al{sub 2}O{sub 3} layer, the BRS is changed to CRS. This CRS has hopping distance of 0.58 nm and Poole-Frenkel current conductions for the “0” and “1” states, respectively. A schematic model using oxygen vacancy filament formation/rupture at the TE/GdO{sub x} interface and Al{sub 2}O{sub 3} layer has been illustrated. This CRS device has good endurance of 1000 cycles with a pulse width of 1 μs, which is very useful for future crossbar architecture.
Authors:
; ;  [1] ;  [2]
  1. Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China)
  2. Material and Chemical Research Laboratories (MRL), Industrial Technology Research Institute (ITRI), Hsinchu 195, Taiwan (China)
Publication Date:
OSTI Identifier:
22489233
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; DEPTH; FILMS; GADOLINIUM OXIDES; INTERFACES; LAYERS; OXYGEN; RUPTURES; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; X-RAY SPECTROSCOPY