Evolution of complementary resistive switching characteristics using IrO{sub x}/GdO{sub x}/Al{sub 2}O{sub 3}/TiN structure
- Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China)
- Material and Chemical Research Laboratories (MRL), Industrial Technology Research Institute (ITRI), Hsinchu 195, Taiwan (China)
The complementary resistive switching (CRS) characteristics using an IrO{sub x}/GdO{sub x}/Al{sub 2}O{sub 3}/TiN single cell are observed whereas the bipolar resistive switching (BRS) characteristics are observed for the IrO{sub x}/GdO{sub x}/TiN structure. Transmission electron microscope and energy dispersive X-ray spectroscopy depth profile show crystalline GdO{sub x} film and the presence of higher amount of oxygen at both IrO{sub x}/GdO{sub x} interface and Al{sub 2}O{sub 3} layer. Inserting thin Al{sub 2}O{sub 3} layer, the BRS is changed to CRS. This CRS has hopping distance of 0.58 nm and Poole-Frenkel current conductions for the “0” and “1” states, respectively. A schematic model using oxygen vacancy filament formation/rupture at the TE/GdO{sub x} interface and Al{sub 2}O{sub 3} layer has been illustrated. This CRS device has good endurance of 1000 cycles with a pulse width of 1 μs, which is very useful for future crossbar architecture.
- OSTI ID:
- 22489233
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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