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Title: Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.
Authors:
;  [1] ;  [2] ; ; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [2] ;  [5]
  1. Research Center for Applied Sciences (RCAS), Academia Sinica, 128 Academia Rd., Sec. 2 Nankang, Taipei 11529, Taiwan (China)
  2. (NCTU), 1001 University Road, Hsinchu 300, Taiwan (China)
  3. (NSYSU), 70 Lienhai Rd., Kaohsiung 80424, Taiwan (China)
  4. Department of Photonics, National Chiao Tung University (NCTU), 1001 University Road, Hsinchu 300, Taiwan (China)
  5. (NCKU), No. 1, University Rd., Tainan 701, Taiwan (China)
Publication Date:
OSTI Identifier:
22489189
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; CRYSTALS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; LANTHANUM SELENIDES; LIFETIME; QUANTUM DOTS; RECOMBINATION