Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4929948· OSTI ID:22489189

Hsu, Kung-Shu; Chang, Shu-Wei ^[1]; Hung, Wei-Chun; Chang, Chih-Chi; Lin, Wei-Hsun; Lin, Shih-Yen ^[1]; Shih, Min-Hsiung ^[1]; Lee, Po-Tsung ^[2]; Chang, Yia-Chung ^[1]

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1. Research Center for Applied Sciences (RCAS), Academia Sinica, 128 Academia Rd., Sec. 2 Nankang, Taipei 11529, Taiwan (China)
2. Department of Photonics, National Chiao Tung University (NCTU), 1001 University Road, Hsinchu 300, Taiwan (China)

We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

• OSTI ID: 22489189
• Journal Information: Applied Physics Letters, Vol. 107, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIERS
CRYSTALS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
LANTHANUM SELENIDES
LIFETIME
QUANTUM DOTS
RECOMBINATION