White-light-induced disruption of nanoscale conducting filament in hafnia
- Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore, Singapore 639798 (Singapore)
- The Aerospace Corporation, P.O. Box 92957, M2-244, Los Angeles, California 90009-2957 (United States)
Nanoscale conducting filament, which forms the basis of the HfO{sub 2} resistive memory, is shown to exhibit a “negative photoconductivity” behavior, in that, electrical conduction through it can be disrupted upon white-light illumination. This behavior should be contrasted against the positive photoconductivity behavior commonly exhibited by oxides or perovskites having narrower bandgaps. The negative photoconductivity effect may be explained in terms of a photon-induced excitation of surrounding oxygen ions, which leads to migration and subsequent recombination with vacancies in the conducting filament. The finding suggests possible electrical-cum-optical applications for HfO{sub 2}-based devices, whose functionality is limited to-date by electrical stimulation.
- OSTI ID:
- 22489113
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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