Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
- School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >10{sup 4} and a field-effect mobility of 5 cm{sup 2} V{sup −1} s{sup −1} under elongation and demonstrate invariant performance over 1000 stretching cycles.
- OSTI ID:
- 22489066
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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