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Title: Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics

Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >10{sup 4} and a field-effect mobility of 5 cm{sup 2} V{sup −1} s{sup −1} under elongation and demonstrate invariant performance over 1000 stretching cycles.
Authors:
; ;  [1] ;  [2] ;  [3] ; ; ;  [4]
  1. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  3. (United States)
  4. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
22489066
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BUCKLING; CARBON NANOTUBES; DIELECTRIC MATERIALS; ELECTRODES; ELONGATION; FAILURES; FIELD EFFECT TRANSISTORS; GELS; IONS; MOBILITY; PERFORMANCE; SUBSTRATES; THIN FILMS