Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4931522· OSTI ID:22489011

Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea ^[1]

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1. Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

• OSTI ID: 22489011
• Journal Information: AIP Conference Proceedings, Vol. 1679, Issue 1; Conference: CPV-11: 11. international conference on conventrator photovoltaictaic systems, Aix-les-Bains (France), 13-15 Apr 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
CONCENTRATION RATIO
CURRENT DENSITY
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
GALLIUM ARSENIDES
LIGHT BULBS
MOLECULAR BEAM EPITAXY
PHOTOVOLTAIC CONVERSION
QUANTUM EFFICIENCY
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR SIMULATORS
TEMPERATURE COEFFICIENT
TEMPERATURE DEPENDENCE
XENON