skip to main content

SciTech ConnectSciTech Connect

Title: Thermoelectric properties of Al doped Mg{sub 2}Si material

In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.
Authors:
;  [1] ;  [1] ;  [2]
  1. Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22488833
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; MAGNESIUM SILICIDES; N-TYPE CONDUCTORS; POTENTIALS; SEEBECK EFFECT; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES; WAVE PROPAGATION