Thermoelectric properties of Al doped Mg{sub 2}Si material

Journal Article · Fri Aug 28 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4929239· OSTI ID:22488833

Kaur, Kulwinder; Kumar, Ranjan ^[1]; Rani, Anita ^[1]

---

1. Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India)

In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

• OSTI ID: 22488833
• Journal Information: AIP Conference Proceedings, Vol. 1675, Issue 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
MAGNESIUM SILICIDES
N-TYPE CONDUCTORS
POTENTIALS
SEEBECK EFFECT
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
THERMOELECTRIC PROPERTIES
WAVE PROPAGATION