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Title: The role of atomic vacancies on phonon confinement in α-GeTe

Atomic defects and their dynamics play a vital role in controlling the behavior of non-volatile phase change memory materials used in advanced optical storage devices. Synthesis and structural analysis by XRD and Raman spectroscopy on α-GeTe single crystal with different sizes are reported. The spectroscopic measurements on micron and nano sized α-GeTe single crystal reveal the evolution of phonon confinement with crystal sizes of few hundred nanometers. The characteristic vibrational modes of bulk α-GeTe structure are found to downshift and asymmetrically broaden to lower frequency with decreasing the single crystal size. We attribute the observed downshift of Raman lines in α-GeTe is largely due to the presence of high concentration of atomic vacancies. The crystal size and temperature dependent Raman spectra provide explicitly the dynamics of vacancies on optical phonon confinement in α-GeTe structure. Thus, the observed large concentration of vacancies and their size dependency might influence the phase change phenomenon in GeTe based alloys.
Authors:
;  [1]
  1. Department of Physics and Astrophysics, University of Delhi, Delhi – 110007 (India)
Publication Date:
OSTI Identifier:
22488537
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALLOYS; GERMANIUM TELLURIDES; MONOCRYSTALS; NANOSTRUCTURES; PHONONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SYNTHESIS; TEMPERATURE DEPENDENCE; VOLATILITY; X-RAY DIFFRACTION