skip to main content

SciTech ConnectSciTech Connect

Title: An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm{sup 2} at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
  2. Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada)
Publication Date:
OSTI Identifier:
22486387
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFINEMENT; DENSITY; LASERS; MODULATION; MOLECULAR BEAM EPITAXY; NANOWIRES; RANDOMNESS; SUBSTRATES; THREE-DIMENSIONAL CALCULATIONS; THREE-DIMENSIONAL LATTICES; THRESHOLD CURRENT; ULTRAVIOLET RADIATION