Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation

Journal Article · Mon Jul 20 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926605· OSTI ID:22486355

Kim, Janghyuk; Lee, Geonyeop; Kim, Jihyun ^[1]

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1. Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713 (Korea, Republic of)

We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO{sub 2}/Si. Carbon ions were bombarded at 20 keV and a dose of 1 × 10{sup 15 }cm{sup −2} onto the surface of the Ni/SiO{sub 2}/Si substrate at a temperature of 500 °C. This was followed by high-temperature activation annealing (600–900 °C) to form a sp{sup 2}-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics.

• OSTI ID: 22486355
• Journal Information: Applied Physics Letters, Vol. 107, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CARBON IONS
DOSES
FILMS
GRAPHENE
HONEYCOMB STRUCTURES
KEV RANGE 10-100
LAYERS
MICROELECTRONICS
RAMAN SPECTROSCOPY
SILICON OXIDES
SUBSTRATES
SURFACES
SYNTHESIS
TEMPERATURE RANGE 0400-1000 K
TRANSMISSION ELECTRON MICROSCOPY