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Title: Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation

We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO{sub 2}/Si. Carbon ions were bombarded at 20 keV and a dose of 1 × 10{sup 15 }cm{sup −2} onto the surface of the Ni/SiO{sub 2}/Si substrate at a temperature of 500 °C. This was followed by high-temperature activation annealing (600–900 °C) to form a sp{sup 2}-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics.
Authors:
; ;  [1]
  1. Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22486355
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CARBON IONS; DOSES; FILMS; GRAPHENE; HONEYCOMB STRUCTURES; KEV RANGE 10-100; LAYERS; MICROELECTRONICS; RAMAN SPECTROSCOPY; SILICON OXIDES; SUBSTRATES; SURFACES; SYNTHESIS; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY