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Title: Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.
Authors:
; ; ;  [1] ; ;  [2] ; ; ;  [3] ;  [1] ;  [4]
  1. IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany)
  2. Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany)
  3. SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany)
  4. (Germany)
Publication Date:
OSTI Identifier:
22486088
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BUFFERS; CRYSTAL DEFECTS; EV RANGE 01-10; FILMS; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PLASMA; RAMAN SPECTROSCOPY; SCANDIUM NITRIDES; SCANDIUM OXIDES; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; YTTRIUM OXIDES