Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
- Department of Physics, Washington University, St. Louis, Missouri 63130 (United States)
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.
- OSTI ID:
- 22485973
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ALUMINIUM NITRIDES
ANISOTROPY
ELECTRONIC EQUIPMENT
ELECTRONIC STRUCTURE
FABRICATION
GALLIUM SELENIDES
GERMANIUM SELENIDES
GERMANIUM SULFIDES
MOLYBDENUM SULFIDES
NANOSTRUCTURES
PIEZOELECTRICITY
POLARIZATION
QUARTZ
SENSORS
SIMULATION
STRAINS
SYMMETRY
TIN SELENIDES
TIN SULFIDES