skip to main content

SciTech ConnectSciTech Connect

Title: High temperature and current density induced degradation of multi-layer graphene

We present evidence of moderate current density, when accompanied with high temperature, promoting migration of foreign atoms on the surface of multi-layer graphene. Our in situ transmission electron microscope experiments show migration of silicon atoms at temperatures above 800 °C and current density around 4.2 × 10{sup 7} A/cm{sup 2}. Originating from the micro-machined silicon structures that clamp the freestanding specimen, the atoms are observed to react with the carbon atoms in the multi-layer graphene to produce silicon carbide at temperatures of 900–1000 °C. In the absence of electrical current, there is no migration of silicon and only pyrolysis of polymeric residue is observed.
Authors:
;  [1] ; ;  [2] ;  [2] ;  [3]
  1. Mechanical and Nuclear Engineering, The Pennsylvania State University, 314, Leonhard Building, University Park, Pennsylvania 16802 (United States)
  2. Korea Institute of Machinery and Materials, 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343 (Korea, Republic of)
  3. (CAMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22485943
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; CURRENT DENSITY; ELECTRIC CURRENTS; GRAPHENE; LAYERS; MIGRATION; PYROLYSIS; SILICON; SILICON CARBIDES; SURFACES; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCOPY