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Title: Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO

We study the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis. The miniaturization of the device from micrometer-sized wire to 80-nm dot results in the increase of the threshold current density J{sub th} by one order, whereas J{sub th} increases only slightly with further reducing the device size down to 30 nm. No significant increase in J{sub th} is seen, as the current pulse width decreases from 100 ms down to 3 ns. We reveal that the switching in devices at reduced size is reasonably well explained by the macrospin model, in which the effects of both the Slonczewski-like torque and field-like torque are included.
Authors:
 [1] ; ;  [2] ;  [3] ;  [1] ;  [3] ;  [3] ;  [1] ;  [3] ;  [3] ;  [3]
  1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
  2. Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22483149
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EQUIPMENT; L-S COUPLING; MAGNESIUM OXIDES; MAGNETIZATION; MINIATURIZATION; PULSES; THRESHOLD CURRENT; TORQUE