Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO

Journal Article · Mon Jul 06 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926371· OSTI ID:22483149

Zhang, C. ^[1]; Sato, H. ^[2]; Matsukura, F. ^[1]; Ohno, H. ^[1]

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1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
2. Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

We study the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis. The miniaturization of the device from micrometer-sized wire to 80-nm dot results in the increase of the threshold current density J{sub th} by one order, whereas J{sub th} increases only slightly with further reducing the device size down to 30 nm. No significant increase in J{sub th} is seen, as the current pulse width decreases from 100 ms down to 3 ns. We reveal that the switching in devices at reduced size is reasonably well explained by the macrospin model, in which the effects of both the Slonczewski-like torque and field-like torque are included.

• OSTI ID: 22483149
• Journal Information: Applied Physics Letters, Vol. 107, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EQUIPMENT
L-S COUPLING
MAGNESIUM OXIDES
MAGNETIZATION
MINIATURIZATION
PULSES
THRESHOLD CURRENT
TORQUE