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Title: Evolution of interfacial Fermi level in In{sub 0.53}Ga{sub 0.47}As/high-κ/TiN gate stacks

The net charge state was probed of metal-oxide-semiconductor gate stacks consisting of In{sub 0.53}Ga{sub 0.47}As /high-κ dielectric/5 nm TiN, for both Al{sub 2}O{sub 3} and HfO{sub 2} dielectrics, via investigation of band bending at the InGaAs/high-κ interface. Using pump-probe photoelectron spectroscopy, changes to band bending were studied for each sequential layer deposited onto the InGaAs substrate and subsequent annealing up to 600 °C. Two behavioral regions were observed in annealing studies: (1) a lower temperature (<350 °C) region, attributed to changes at the high-κ/TiN interface, and (2) a higher temperature region (> 350 °C), associated with a net positive charge increase within the oxide. These band bending measurements delineate the impact of processing steps inherently inaccessible via capacitance-voltage electrical characterization.
Authors:
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  1. IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)
Publication Date:
OSTI Identifier:
22483146
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; ANNEALING; CAPACITANCE; CHARGE STATES; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FERMI LEVEL; GALLIUM ARSENIDES; HAFNIUM OXIDES; INDIUM ARSENIDES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; TITANIUM NITRIDES