skip to main content

Title: Synthesis and characterization of nitrogen-doped graphene films using C{sub 5}NCl{sub 5}

To modify the electrical properties of graphene, we have synthesized nitrogen-doped graphene films using pentachloropyridine and methane by a two-step growth process with the N/C ratio of 2.5%–4%. The nitrogen-doped graphene presoma synthesized at 350 °C can be transformed into nitrogen-doped graphene fragments by annealing at 1000 °C. The introduction of methane as a second carbon source plays a key role in the formation of continuous uniform nitrogen-doped graphene films. The as-obtained N-doped graphene films exhibit n-type conduction with the electron mobility and density of 375 cm{sup 2} V{sup −1} s{sup −1} and 2.38 × 10{sup 13 }cm{sup −2} at room temperature, respectively.
Authors:
 [1] ;  [2] ; ; ; ;  [1]
  1. Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Science, Shanghai 201210 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22483098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CARBON SOURCES; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; FILMS; GRAPHENE; METHANE; NITROGEN; SYNTHESIS; TEMPERATURE RANGE 0273-0400 K