Synthesis and characterization of nitrogen-doped graphene films using C{sub 5}NCl{sub 5}

Journal Article · Mon Jun 22 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4922946· OSTI ID:22483098

Cai, Wei ^[1]; Wang, Cong; Fang, Xiaohong; Yang, Liyou; Chen, Xiaoyuan ^[1]

---

1. Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Science, Shanghai 201210 (China)

To modify the electrical properties of graphene, we have synthesized nitrogen-doped graphene films using pentachloropyridine and methane by a two-step growth process with the N/C ratio of 2.5%–4%. The nitrogen-doped graphene presoma synthesized at 350 °C can be transformed into nitrogen-doped graphene fragments by annealing at 1000 °C. The introduction of methane as a second carbon source plays a key role in the formation of continuous uniform nitrogen-doped graphene films. The as-obtained N-doped graphene films exhibit n-type conduction with the electron mobility and density of 375 cm{sup 2} V{sup −1} s{sup −1} and 2.38 × 10{sup 13 }cm{sup −2} at room temperature, respectively.

• OSTI ID: 22483098
• Journal Information: Applied Physics Letters, Vol. 106, Issue 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CARBON SOURCES
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
FILMS
GRAPHENE
METHANE
NITROGEN
SYNTHESIS
TEMPERATURE RANGE 0273-0400 K