Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

Journal Article · Mon Oct 12 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4933392· OSTI ID:22482258

Berrada, Salim; Bescond, Marc; Cavassilas, Nicolas; Raymond, Laurent; Lannoo, Michel ^[1]

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1. IM2NP UMR CNRS 7334, Aix-Marseille Université, Technopôle de Château Gombert, 60 Rue Frédéric Joliot Curie, Bâtiment Néel,13453 Marseille (France)

This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.

• OSTI ID: 22482258
• Journal Information: Applied Physics Letters, Vol. 107, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIERS
CONFINEMENT
CONTROL
DIELECTRIC MATERIALS
DOPED MATERIALS
ENGINEERING
MONITORING
SHAPE
SIMULATION
TRANSISTORS