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Title: Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States)
  3. Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)
Publication Date:
OSTI Identifier:
22482257
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; LIFETIME; QUANTUM WELLS; QUASIBOUND STATE; SIGNALS; TUNNEL DIODES; TUNNEL EFFECT; VELOCITY