Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo|CoFeB|MgO structures
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
- Department of Physics and Astronomy, California State University Northridge, Northridge, California 91330 (United States)
- Inston Inc., Los Angeles, California 90095 (United States)
We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in annealed Mo|CoFeB|MgO layered structures. The interfacial perpendicular magnetic anisotropy (PMA) is observed to increase with annealing over the studied temperature range, and a VCMA coefficient of about 40 fJ/V-m is sustained after annealing at temperatures as high as 430 °C. Ab initio electronic structure calculations of interfacial PMA as a function of strain further show that strain relaxation may lead to the increase of interfacial PMA at higher annealing temperatures. Measurements also show that there is no significant VCMA and interfacial PMA dependence on the CoFeB thickness over the studied range, which illustrates the interfacial origin of the anisotropy and its voltage dependence, i.e., the VCMA effect. The high thermal annealing stability of Mo|CoFeB|MgO structures makes them compatible with advanced CMOS back-end-of-line processes, and will be important for integration of magnetoelectric random access memory into on-chip embedded applications.
- OSTI ID:
- 22482211
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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