Electronic band structure of highly mismatched GaN{sub 1−x}Sb{sub x} alloys in a broad composition range

Journal Article · Mon Oct 05 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4932592· OSTI ID:22482207

Yu, K. M. ^[1]; Ting, M. ^[1]; Sarney, W. L.; Svensson, S. P. ^[2]; Novikov, S. V.; Foxon, C. T. ^[3]; Walukiewicz, W. ^[1]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
3. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

In this letter, we study the optical properties of GaN{sub 1−x}Sb{sub x} thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 °C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN{sub 1−x}Sb{sub x} in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications.

• OSTI ID: 22482207
• Journal Information: Applied Physics Letters, Vol. 107, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
ALLOYS
GALLIUM ANTIMONIDES
GALLIUM NITRIDES
LAYERS
OPTICAL PROPERTIES
PHOTOELECTROCHEMICAL CELLS
THIN FILMS