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Title: Electronic band structure of highly mismatched GaN{sub 1−x}Sb{sub x} alloys in a broad composition range

In this letter, we study the optical properties of GaN{sub 1−x}Sb{sub x} thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 °C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN{sub 1−x}Sb{sub x} in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [2] ; ;  [5] ; ;  [6] ;  [3]
  1. Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland)
  2. (United States)
  3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  4. (Hong Kong)
  5. U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
  6. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
Publication Date:
OSTI Identifier:
22482207
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ALLOYS; GALLIUM ANTIMONIDES; GALLIUM NITRIDES; LAYERS; OPTICAL PROPERTIES; PHOTOELECTROCHEMICAL CELLS; THIN FILMS