Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4932133· OSTI ID:22482177

Puczkarski, Paweł; Gehring, Pascal; Lau, Chit S.; Liu, Junjie; Warner, Jamie H.; Briggs, G. Andrew D.; Mol, Jan A. ^[1]; Ardavan, Arzhang ^[2]

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1. Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom)
2. Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom)

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1 V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

• OSTI ID: 22482177
• Journal Information: Applied Physics Letters, Vol. 107, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
FEEDBACK
GRAPHENE
MOLECULES
QUANTUM DOTS
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS