skip to main content

Title: Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1 V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom)
  2. Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom)
Publication Date:
OSTI Identifier:
22482177
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; FEEDBACK; GRAPHENE; MOLECULES; QUANTUM DOTS; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS