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Title: Characteristics of the dynamics of breakdown filaments in Al{sub 2}O{sub 3}/InGaAs stacks

In this paper, the Al{sub 2}O{sub 3}/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.
Authors:
 [1] ;  [2] ;  [3] ; ;  [4] ;  [5]
  1. National Scientific and Technical Research Council (CONICET), Av. Rivadavia 1917, Buenos Aires (Argentina)
  2. (UTN), Medrano 951, Buenos Aires (Argentina)
  3. (1650), Buenos Aires (Argentina)
  4. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
  5. Solid State Institute, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
Publication Date:
OSTI Identifier:
22482136
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; FILAMENTS; GALLIUM ARSENIDES; INDIUM; INDIUM ARSENIDES; INTERFACES; SEMICONDUCTOR DEVICES; SUBSTRATES; X-RAY PHOTOELECTRON SPECTROSCOPY