Characteristics of the dynamics of breakdown filaments in Al{sub 2}O{sub 3}/InGaAs stacks
- National Scientific and Technical Research Council (CONICET), Av. Rivadavia 1917, Buenos Aires (Argentina)
- Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
- Solid State Institute, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
In this paper, the Al{sub 2}O{sub 3}/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.
- OSTI ID:
- 22482136
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al{sub 2}O{sub 3}/InGaAs stacks
Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks
The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stack
Journal Article
·
Mon Sep 08 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22482136
+1 more
Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks
Journal Article
·
Sat Mar 14 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22482136
The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stack
Journal Article
·
Mon May 19 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22482136
+2 more