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Title: Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Department of Physics, Lancaster University, Bailrigg, Lancaster LA1 4YB (United Kingdom)
  3. Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  4. Instituto de FĂ­sica, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro (Brazil)
Publication Date:
OSTI Identifier:
22482053
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRONS; GERMANIUM SILICIDES; IMPURITIES; QUANTUM DOTS; QUANTUM WELLS; SILICON; WAVE FUNCTIONS