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Dy{sup 3+}-doped Ga–Sb–S chalcogenide glasses for mid-infrared lasers

Journal Article · · Materials Research Bulletin
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  1. Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China)
  2. Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China)
Highlights: • Novel Ga–Sb–S chalcogenide glasses doped with Dy{sup 3+} ions were synthesized. • The glasses show good thermal stability and excellent infrared transparency. • The glasses show low phonon energy and intense mid-infrared emissions. • The mid-infrared emissions have high quantum efficiency. • The mid-infrared emissions have large stimulated emission cross sections. - Abstract: Novel Ga–Sb–S chalcogenide glasses doped with different amount of Dy{sup 3+} ions were prepared. Their thermal stability, optical properties, and mid-infrared (MIR) emission properties were investigated. The glasses show good thermal stability, excellent infrared transparency, very low phonon energy (∼306 cm{sup −1}), and intense emissions centered at 2.95, 3.59, 4.17 and 4.40 μm. Three Judd–Ofelt intensity parameters (Ω{sub 2} = 8.51 × 10{sup −20} cm{sup 2}, Ω{sub 4} = 2.09 × 10{sup −20} cm{sup 2}, and Ω{sub 6} = 1.60 × 10{sup −20} cm{sup 2}) are obtained, and the related radiative transition properties are evaluated. The high quantum efficiencies and large stimulated emission cross sections of the MIR emissions (88.10% and 1.11 × 10{sup −20} cm{sup 2} for 2.95 μm emission, 75.90% and 0.38 × 10{sup −20} cm{sup 2} for 4.40 μm emission, respectively) in the Dy{sup 3+}-doped Ga–Sb–S glasses make them promising gain materials for the MIR lasers.
OSTI ID:
22475889
Journal Information:
Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 70; ISSN MRBUAC; ISSN 0025-5408
Country of Publication:
United States
Language:
English