Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

Journal Article · Thu Jan 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615010248· OSTI ID:22470124

Martovitsky, V. P.; Bazalevsky, M. A.; Klekovkin, A. V. ^[1]; Averyanov, D. V.; Vasil’evskii, I. S. ^[2]

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1. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
2. National Research Nuclear University MEPhI (Russian Federation)

The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force microscopy, X-ray diffractometry, Rutherford backscattering, and Raman scattering. It is shown that GeSn layers with thicknesses up to 0.5 μm and Sn molar fractions up to 0.073 manifest no sign of plastic relaxation upon epitaxy. The lattice constant of the GeSn layers within the growth plane is precisely the same as that of Ge. The effect of rapid thermal annealing on the conversion of metastable elastically strained GeSn layers into a plastically relaxed state is examined. Ge/GeSn quantum wells with Sn molar fraction up to 0.11 are obtained.

• OSTI ID: 22470124
• Journal Information: Semiconductors, Vol. 49, Issue 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ATOMIC FORCE MICROSCOPY
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
GERMANIUM
INTERMETALLIC COMPOUNDS
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
RAMAN EFFECT
RAMAN SPECTROSCOPY
REFLECTION
RELAXATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
STRAINS
TIN
X-RAY DIFFRACTION