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Title: Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells (QW). The method of calculation of compensating short-period ZnSSe/ZnSe superlattices (SLs) in both active and waveguide regions of laser heterostructures possessing the different waveguide thickness and different number of active regions is presented. The method allowing reduction of the density of nonequilibrium point defects in the active region of the II–VI laser structures has been proposed. It utilizes the migration enhanced epitaxy mode in growing the ZnSe QW confining the CdSe QD sheet. The threshold power density as low as P{sub thr} ∼ 0.8 kW/cm{sup 2} at T = 300 K has been demonstrated for laser heterostructure with single CdSe QD sheet and asymmetric graded-index waveguide with strain-compensating SLs.
Authors:
; ; ; ; ;  [1] ; ; ;  [2] ; ; ;  [3] ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. National Academy of Sciences of Belarus, Stepanov Institute of Physics (Belarus)
  3. Moscow State Technical University of Radio Engineering, Electronics, and Automation (Russian Federation)
Publication Date:
OSTI Identifier:
22470050
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CADMIUM SELENIDES; ELECTRONS; HETEROJUNCTIONS; MAGNESIUM SULFIDES; MOLECULAR BEAM EPITAXY; POINT DEFECTS; POWER DENSITY; QUANTUM DOTS; QUANTUM WELLS; STRAINS; SUPERLATTICES; ZINC SELENIDES