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Title: Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.
Authors:
; ;  [1]
  1. National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)
Publication Date:
OSTI Identifier:
22469839
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; CARRIER MOBILITY; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GLASS; GRAIN ORIENTATION; HALL EFFECT; HOLES; MORPHOLOGY; POLYCRYSTALS; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SPRAYS; SUBSTRATES; SULFUR IONS; SURFACES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES