skip to main content

SciTech ConnectSciTech Connect

Title: Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells

Results on the molecular-beam epitaxy growth of short-period alternately-strained ZnS{sub x}Se{sub 1−x}/CdSe superlattices which are pseudomorphic to GaAs (001) substrates and possess effective band-gap values within the range of E{sub g} ≈ 2.5–2.7 eV are presented. Oscillations of the specular-spot intensity in reflection high-energy electron diffraction are used for in situ control of the superlattice parameters. A method to determine the SL parameters (compositions and thicknesses of the constituent layers) based on combined analysis of the grown structures by low-temperature photoluminescence and X-ray diffractometry is developed. It is found that the parameters of the grown ZnS{sub x}Se{sub 1−x}/CdSe superlattices are close to their design values and the density of extended defects in the structures is low even though the structure thickness (∼300 nm) considerably exceeds the critical thickness for bulk II–VI layers with the same lattice-constant mismatch.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469824
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM SELENIDES; ELECTRON DIFFRACTION; EMISSION SPECTRA; GALLIUM ARSENIDES; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PHOTOLUMINESCENCE; REFLECTION; SOLAR CELLS; STRAINS; SUBSTRATES; SUPERLATTICES; X-RAY DIFFRACTION; ZINC SULFIDES