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Title: Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon

Understanding the behavior of helium in solids under conditions of intense ionizing radiation is of particular interest in solving many problems of nuclear, fusion, and space materials science and also in microelectronics. The observed effect of suppressing the formation of helium blisters on the surface of helium ion-doped silicon as a result of irradiation with high-energy bismuth ions is reported in this publication. It is suggested that a possible decrease in the concentration of helium atoms in silicon is due to their radiationinduced desorption from the area of doping in terms of the high-impact ionization of bismuth ions.
Authors:
; ;  [1] ;  [2]
  1. Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research (Russian Federation)
  2. National Research Nuclear University “MEPhi” (Moscow Engineering Physics Institute) (Russian Federation)
Publication Date:
OSTI Identifier:
22469727
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH IONS; BLISTERS; CONCENTRATION RATIO; DESORPTION; DOPED MATERIALS; ENERGY LOSSES; HELIUM; HELIUM IONS; IONIZATION; IONIZING RADIATIONS; IRRADIATION; MICROELECTRONICS; RADIATION EFFECTS; SILICON; SOLIDS; SURFACES