Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S106378261510022X· OSTI ID:22469727

Dmitriev, S. N.; Sohatsky, A. S. ^[1]; Zaluzhnyi, A. G. ^[2]

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1. Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research (Russian Federation)
2. National Research Nuclear University “MEPhi” (Moscow Engineering Physics Institute) (Russian Federation)

Understanding the behavior of helium in solids under conditions of intense ionizing radiation is of particular interest in solving many problems of nuclear, fusion, and space materials science and also in microelectronics. The observed effect of suppressing the formation of helium blisters on the surface of helium ion-doped silicon as a result of irradiation with high-energy bismuth ions is reported in this publication. It is suggested that a possible decrease in the concentration of helium atoms in silicon is due to their radiationinduced desorption from the area of doping in terms of the high-impact ionization of bismuth ions.

• OSTI ID: 22469727
• Journal Information: Semiconductors, Vol. 49, Issue 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH IONS
BLISTERS
CONCENTRATION RATIO
DESORPTION
DOPED MATERIALS
ENERGY LOSSES
HELIUM
HELIUM IONS
IONIZATION
IONIZING RADIATIONS
IRRADIATION
MICROELECTRONICS
RADIATION EFFECTS
SILICON
SOLIDS
SURFACES