Study of modification methods of probes for critical-dimension atomic-force microscopy by the deposition of carbon nanotubes

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615130023· OSTI ID:22469656

Bykov, Al. V. ^[1]; Kolomiitsev, A. S.; Konoplev, B. G.; Rubashkina, M. V.; Smirnov, V. A.; Tsukanova, O. G. ^[2]

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1. NT-MDT (Russian Federation)
2. Southern Federal University, Institute for Nanotechnologies, Electronics, and Electronic Equipment Engineering (Russian Federation)

The results of an experimental study of the modification of probes for critical-dimension atomicforce microscopy (CD-AFM) by the deposition of carbon nanotubes (CNTs) to improve the accuracy with which the surface roughness of vertical walls is determined in submicrometer structures are presented. Methods of the deposition of an individual CNT onto the tip of an AFM probe via mechanical and electrostatic interaction between the probe and an array of vertically aligned carbon nanotubes (VACNTs) are studied. It is shown that, when the distance between the AFM tip and a VACNT array is 1 nm and the applied voltage is within the range 20–30 V, an individual carbon nanotube is deposited onto the tip. On the basis of the results obtained in the study, a probe with a carbon nanotube on its tip (CNT probe) with a radius of 7 nm and an aspect ratio of 1:15 is formed. Analysis of the CNT probe demonstrates that its use improves the resolution and accuracy of AFM measurements, compared with the commercial probe, and also makes it possible to determine the roughness of the vertical walls of high-aspect structures by CD-AFM. The results obtained can be used to develop technological processes for the fabrication and reconditioning of special AFM probes, including those for CD-AFM, and procedures for the interoperational express monitoring of technological process parameters in the manufacturing of elements for micro- and nanoelectronics and micro- and nanosystem engineering.

• OSTI ID: 22469656
• Journal Information: Semiconductors, Vol. 49, Issue 13; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ACCURACY
ASPECT RATIO
ATOMIC FORCE MICROSCOPY
CARBON NANOTUBES
COMPARATIVE EVALUATIONS
DEPOSITION
ELECTRIC POTENTIAL
FABRICATION
MONITORING
NANOELECTRONICS
PROBES
RESOLUTION
ROUGHNESS
SURFACES