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Title: The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.
Authors:
; ;  [1] ; ;  [2] ; ;  [3] ;  [4]
  1. Department of Physics and Astronomy, University of Manitoba, Winnipeg, R3T 2N2 Canada (Canada)
  2. École Polytechnique de Montréal, Montréal, H3T 1J4 Canada (Canada)
  3. The Key Lab for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China)
  4. Everspin Technologies, 1347 N. Alma School Road, Chandler, Arizona 85224 (United States)
Publication Date:
OSTI Identifier:
22454483
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONS; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; PARTICLES; SPIN ORIENTATION; THRESHOLD CURRENT; TUNNEL EFFECT