The growth of heteroepitaxial CuInSe{sub 2} on free-standing N-polar GaN
- Multidisciplinary Science Research Center, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
- Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
- Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
- Department of Electrophysics, National Chiao Tung University, Taiwan ROC (China)
- United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan ROC (China)
We report that chalcopyrite CuInSe{sub 2} thin films were grown on free-standing N-polar GaN (0001{sup -}) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe{sub 2} thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe{sub 2} (112) film on N-polar GaN. Microstructure analysis of the CuInSe{sub 2 } showed that the large lattice mismatch (28.5%) between CuInSe{sub 2 } and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe{sub 2} and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe{sub 2} thin film, which exhibits a promising potential for optoelectronic applications.
- OSTI ID:
- 22420200
- Journal Information:
- AIP Advances, Vol. 4, Issue 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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