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Title: The growth of heteroepitaxial CuInSe{sub 2} on free-standing N-polar GaN

We report that chalcopyrite CuInSe{sub 2} thin films were grown on free-standing N-polar GaN (0001{sup -}) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe{sub 2} thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe{sub 2} (112) film on N-polar GaN. Microstructure analysis of the CuInSe{sub 2 } showed that the large lattice mismatch (28.5%) between CuInSe{sub 2 } and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe{sub 2} and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe{sub 2} thin film, which exhibits a promising potential for optoelectronic applications.
Authors:
 [1] ; ; ;  [2] ; ; ;  [3] ; ;  [4] ;  [5]
  1. Multidisciplinary Science Research Center, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
  2. Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
  3. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC (China)
  4. Department of Electrophysics, National Chiao Tung University, Taiwan ROC (China)
  5. United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan ROC (China)
Publication Date:
OSTI Identifier:
22420200
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHALCOPYRITE; CRYSTAL DEFECTS; GALLIUM NITRIDES; INTERFACES; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NEUTRON DIFFRACTION; PEAKS; THIN FILMS; X-RAY DIFFRACTION