Tunable electronic and optical properties of monolayer silicane under tensile strain: A many-body study
- Department of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189 (China)
- Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China)
The electronic structure and optical response of silicane to strain are investigated by employing first-principles calculations based on many-body perturbation theory. The bandgap can be efficiently engineered in a broad range and an indirect to direct bandgap transition is observed under a strain of 2.74%; the semiconducting silicane can even be turned into a metal under a very large strain. The transitions derive from the persistent downward shift of the lowest conduction band at the Γ-point upon an increasing strain. The quasi-particle bandgaps of silicane are sizable due to the weak dielectric screening and the low dimension; they are rapidly reduced as strain increases while the exciton bound energy is not that sensitive. Moreover, the optical absorption edge of the strained silicane significantly shifts towards a low photon energy region and falls into the visible light range, which might serve as a promising candidate for optoelectronic devices.
- OSTI ID:
- 22420039
- Journal Information:
- Journal of Chemical Physics, Vol. 141, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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