Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

Journal Article · Mon Jan 26 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906513· OSTI ID:22415191

Wang, Y. Y. ^[1]; Cooper, D.; Bernier, N. ^[2]; Rouviere, J. ^[2]; Murray, C. E.; Bruley, J. ^[3]

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1. IBM Micro-Electronics Division, 2070 Route 52, Hopewell Junction, New York 12570 (United States)
2. University Grenoble Alpes, F-38000 Grenoble (France)
3. IBM T. J. Watson Research Center, 1101 Kitchawan Road, Route 134, Yorktown Heights, New York 10598 (United States)

The detailed strain distributions produced by embedded SiGe stressor structures are measured at high spatial resolution with high precision, with dual lens dark field electron holography and precession electron diffraction. Shear strain and lattice rotation within the crystalline lattice are observed at the boundaries between the SiGe and Si regions. The experimental results are compared to micromechanical modeling simulations to understand the mechanisms of elastic relaxation on all the modes of deformation at a sub-micron length scale.

• OSTI ID: 22415191
• Journal Information: Applied Physics Letters, Vol. 106, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRON DIFFRACTION
ELECTRONS
GERMANIUM SILICIDES
NANOSTRUCTURES
SEMICONDUCTOR DEVICES
SILICON
SIMULATION
STRAINS