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Title: Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

The detailed strain distributions produced by embedded SiGe stressor structures are measured at high spatial resolution with high precision, with dual lens dark field electron holography and precession electron diffraction. Shear strain and lattice rotation within the crystalline lattice are observed at the boundaries between the SiGe and Si regions. The experimental results are compared to micromechanical modeling simulations to understand the mechanisms of elastic relaxation on all the modes of deformation at a sub-micron length scale.
Authors:
 [1] ; ;  [2] ;  [3] ;  [2] ;  [3] ; ;  [4]
  1. IBM Micro-Electronics Division, 2070 Route 52, Hopewell Junction, New York 12570 (United States)
  2. University Grenoble Alpes, F-38000 Grenoble (France)
  3. (France)
  4. IBM T. J. Watson Research Center, 1101 Kitchawan Road, Route 134, Yorktown Heights, New York 10598 (United States)
Publication Date:
OSTI Identifier:
22415191
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRON DIFFRACTION; ELECTRONS; GERMANIUM SILICIDES; NANOSTRUCTURES; SEMICONDUCTOR DEVICES; SILICON; SIMULATION; STRAINS