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Title: Ultrafast dynamics of type-II GaSb/GaAs quantum dots

In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.
Authors:
; ;  [1] ;  [2] ; ; ;  [3] ;  [1] ;  [2] ;  [4] ;  [5]
  1. Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork (Ireland)
  2. (Ireland)
  3. Department of Electrical Engineering and California NanoSystems Institute, University of California - Los Angeles, Los Angeles, California 90095 (United States)
  4. (Russian Federation)
  5. School of Science, Waterford Institute of Technology, Waterford (Ireland)
Publication Date:
OSTI Identifier:
22415116
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE CARRIERS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HETEROJUNCTIONS; QUANTUM DOTS; SOLAR CELLS; SPECTROSCOPY; TEMPERATURE RANGE 0273-0400 K