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Title: Growth orientation dependence of Si doping in GaAsN

The incorporation of Si in GaAsN alloys grown simultaneously on (100), (311)A, (311)B, and (211)B GaAs substrates by the chemical beam epitaxy has been investigated. The decrease in electron concentration with the increasing N composition suggests the occurrence of N and Si interaction, whereas the interaction exhibits evidently different extent depending on the growth orientation. Combined with the secondary ion mass spectrometry and photoluminescence measurements, it is revealed that (311)B and (211)B are the promising substrate orientations to reduce the N-Si passivation and improve n-type Si doping in GaAsN over a wider N composition range. A surface bonding model is utilized to explain the plane polarity dependent incorporation behaviors of Si and N.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ; ;  [4]
  1. Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)
  2. (China)
  3. Optoelectronic Department, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)
  4. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 (Japan)
Publication Date:
OSTI Identifier:
22413072
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRONS; EPITAXY; GALLIUM ARSENIDES; GALLIUM NITRIDES; MASS SPECTROSCOPY; N-TYPE CONDUCTORS; ORIENTATION; PASSIVATION; PHOTOLUMINESCENCE; SILICON; SUBSTRATES; SURFACES