A study of transport properties in Cu and P doped ZnSb
Journal Article
·
· Journal of Applied Physics
- Department of Physics, University of Oslo, Blindern, P.O. Box 1048, 0316 Oslo (Norway)
ZnSb samples have been doped with copper and phosphorus and sintered at 798 K. Electronic transport properties are interpreted as being influenced by an impurity band close to the valence band. At low Cu dopant concentrations, this impurity band degrades the thermoelectric properties as the Seebeck coefficient and effective mass are reduced. At carrier concentrations above 1 × 10{sup 19 }cm{sup −3}, the Seebeck coefficient in Cu doped samples can be described by a single parabolic band.
- OSTI ID:
- 22413025
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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