The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing
- School of Physics, Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Beijing 100081 (China)
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University, Beijing 100191 (China)
- Physics Department, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo (Norway)
We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce{sup 3+} and Yb{sup 3+} ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 °C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO{sub 2} phase had formed in the oxides. The proportions of the phases varied with the “nominal Si-richness” of the films. Energy transfer from the excited Ce{sup 3+} to Yb{sup 3+} can be inferred from both PL excitation and decay spectra.
- OSTI ID:
- 22412980
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTRA
ANNEALING
CERIUM IONS
CERIUM OXIDES
DOPED MATERIALS
EMISSION SPECTRA
ENERGY TRANSFER
EXCITATION
FILMS
PHOTOLUMINESCENCE
SILICATES
SILICON OXIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
YTTERBIUM IONS