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Title: Negative capacitance switching via VO{sub 2} band gap engineering driven by electric field

We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO{sub 2} layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO{sub 2} band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO{sub 2} can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.
Authors:
; ; ; ; ; ; ;  [1] ; ;  [2]
  1. Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620 (China)
  2. National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, No. 500 Yutian Road, Shanghai 200083 (China)
Publication Date:
OSTI Identifier:
22412768
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CAPACITANCE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRICITY; ENERGY GAP; JOULE HEATING; LAYERS; MODULATION; PHASE TRANSFORMATIONS; PROBES; QUANTUM WELLS; TEMPERATURE DEPENDENCE; VANADIUM OXIDES