Negative capacitance switching via VO{sub 2} band gap engineering driven by electric field
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620 (China)
- National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, No. 500 Yutian Road, Shanghai 200083 (China)
We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO{sub 2} layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO{sub 2} band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO{sub 2} can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.
- OSTI ID:
- 22412768
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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