Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

Journal Article · Mon Feb 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4909515· OSTI ID:22412653

Aseev, Pavel; Rodriguez, Paul E. D. Soto; Gómez, Víctor J.; Alvi, Naveed ul Hassan; Calleja, Enrique ^[1]; Mánuel, José M.; Jiménez, Juan J.; García, Rafael ^[2]; Morales, Francisco M. ^[2]; Senichev, Alexander ^[3]; Lienau, Christoph ^[4]; others, and

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1. Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
2. Departamente Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Facultad de Ciencias, Universidad de Cádiz, Puerto Real, 11510 Cádiz (Spain)
3. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany)
4. Institute of Physics and Center of Interface Science, Carl von Ossietzky Universität Oldenburg, Ammerländer Heerstr. 114-118, 26129 Oldenburg (Germany)

The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.

• OSTI ID: 22412653
• Journal Information: Applied Physics Letters, Vol. 106, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
GALLIUM NITRIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PLASMA
P-TYPE CONDUCTORS
SCANNING LIGHT MICROSCOPY
SILICON
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
WAVELENGTHS
X-RAY DIFFRACTION