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Title: p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

In this work, we report a p- to n-type conductivity transition of GaInNAs (1.0 eV bandgap) layers in p-i-n dilute nitride solar cells continuously controlled by the V/III ratio during growth. Near the transition region, we were able to produce GaInNAs layers with very low effective electrically active doping concentrations resulting in wide depleted areas. We obtained internal quantum efficiencies (IQEs) up to 85% at 0.2 eV above the bandgap. However, the high IQE comes along with an increased dark current density resulting in a decreased open circuit voltage of about 0.2 V. This indicates the formation of non-radiant defect centers related to the p-type to n-type transition. Rapid-thermal annealing of the solar cells on the one hand helps to anneal some of these defects but on the other hand increases the effective doping concentrations.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Am Hubland, Würzburg D97074 (Germany)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22412636
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CONCENTRATION RATIO; CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRIC POTENTIAL; ENERGY GAP; EV RANGE; GALLIUM ARSENIDES; INDIUM NITRIDES; LAYERS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; QUANTUM EFFICIENCY; SOLAR CELLS