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Title: Magnetic properties and anisotropic magnetoresistance of antiperovskite nitride Mn{sub 3}GaN/Co{sub 3}FeN exchange-coupled bilayers

Epitaxial bilayers of antiferromagnetic Mn{sub 3}GaN/ferromagnetic Co{sub 3}FeN with an antiperovskite structure were grown by reactive magnetron sputtering, and their structural, magnetic, and electrical properties were investigated. Exchange coupling with an exchange field H{sub ex} of 0.4 kOe at 4 K was observed for Mn{sub 3}GaN (20 nm)/Co{sub 3}FeN (5 nm) bilayers. Negative anisotropic magnetoresistance (AMR) effect in Co{sub 3}FeN was observed and utilized to detect magnetization reversal in exchange-coupled Mn{sub 3}GaN/Co{sub 3}FeN bilayers. The AMR results showed evidence for current-induced spin transfer torque in antiferromagnetic Mn{sub 3}GaN.
Authors:
; ; ; ; ;  [1]
  1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22410104
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; COBALT COMPOUNDS; COUPLING; EPITAXY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM NITRIDES; IRON NITRIDES; LAYERS; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE COMPOUNDS; SPIN; SPUTTERING; TORQUE