Dielectric function in the spectral range (0.5–8.5)eV of an (Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} thin film with continuous composition spread
- Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 5, D-04103 Leipzig (Germany)
We determined the dielectric function of the alloy system (Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} by spectroscopic ellipsometry in the wide spectral range from 0.5 eV to 8.5 eV and for Al contents ranging from x = 0.11 to x = 0.55. For the composition range x < 0.4, we observe single phase material in the β-modification and for larger Al content also the occurrence of γ-(Al,Ga){sub 2}O{sub 3}. We derived spectra of the refractive index and the absorption coefficient as well as energy parameters of electronic band-band transitions by model analysis of the dielectric function. The dependence of the dielectric functions lineshape and the energy parameters on x is highly continuous, reflecting theoretical expectations. The data presented here provide a basis for a deeper understanding of the electronic properties of this material system and may be useful for device engineering.
- OSTI ID:
- 22402952
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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