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Title: Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.
Authors:
; ; ; ; ;  [1] ; ;  [2] ; ; ;  [3] ;  [4]
  1. Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan)
  2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
  3. Okuno Chemical Industries Co., Ltd., 2-1-25 Hanaten-nishi, Joto-ku, Osaka 536-0011 (Japan)
  4. Tomoe Works Co., Ltd., 7-13 Tsurumachi, Amagasaki 660-0092 (Japan)
Publication Date:
OSTI Identifier:
22402438
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRODES; EUROPIUM; GALLIUM NITRIDES; INDIUM; INDIUM COMPLEXES; LIGHT EMITTING DIODES; MIXTURES; SCREEN PRINTING; SINTERING; SUBSTRATES; TIN COMPLEXES; TIN OXIDES; VISIBLE RADIATION