Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany)
- Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074 Aachen (Germany)
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/√(Hz) making our graphene sensors highly interesting for industrial applications.
- OSTI ID:
- 22399059
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Moiré commensurability and the quantum anomalous Hall effect in twisted bilayer graphene on hexagonal boron nitride
Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy