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Title: Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/√(Hz) making our graphene sensors highly interesting for industrial applications.
Authors:
;  [1] ;  [2] ; ;  [3] ;  [1] ; ;  [4]
  1. JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany)
  2. (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich (Germany)
  3. Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074 Aachen (Germany)
  4. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22399059
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; CARRIER MOBILITY; CHARGE CARRIERS; DENSITY; ELECTRIC POTENTIAL; ENCAPSULATION; FABRICATION; GAIN; GRAPHENE; HALL EFFECT; RESOLUTION; SENSITIVITY; SENSORS; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K