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Title: Single-charge transport in ambipolar silicon nanoscale field-effect transistors

We report single-charge transport in ambipolar nanoscale MOSFETs, electrostatically defined in near-intrinsic silicon. We use the ambipolarity to demonstrate the confinement of either a few electrons or a few holes in exactly the same crystalline environment underneath a gate electrode. We find similar electron and hole quantum dot properties while the mobilities differ quantitatively like in microscale devices. The understanding and control of individual electrons and holes are essential for spin-based quantum information processing.
Authors:
; ; ;  [1]
  1. NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)
Publication Date:
OSTI Identifier:
22398962
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER MOBILITY; CHARGE TRANSPORT; CONFINEMENT; ELECTRODES; ELECTRONS; HOLES; MOSFET; QUANTUM DOTS; QUANTUM INFORMATION; SILICON; SPIN