Single-charge transport in ambipolar silicon nanoscale field-effect transistors

Journal Article · Mon Apr 27 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4919110· OSTI ID:22398962

Mueller, Filipp; Konstantaras, Georgios; Wiel, Wilfred G. van der

We report single-charge transport in ambipolar nanoscale MOSFETs, electrostatically defined in near-intrinsic silicon. We use the ambipolarity to demonstrate the confinement of either a few electrons or a few holes in exactly the same crystalline environment underneath a gate electrode. We find similar electron and hole quantum dot properties while the mobilities differ quantitatively like in microscale devices. The understanding and control of individual electrons and holes are essential for spin-based quantum information processing.

• OSTI ID: 22398962
• Journal Information: Applied Physics Letters, Vol. 106, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIER MOBILITY
CHARGE TRANSPORT
CONFINEMENT
ELECTRODES
ELECTRONS
HOLES
MOSFET
QUANTUM DOTS
QUANTUM INFORMATION
SILICON
SPIN